|
|
Other articles related with "SiN passivation"：
|
|
117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
| |
|
|
Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(307)
[HTML 1 KB]
[PDF 831 KB]
(94)
|
|
|
97309 |
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇) |
| |
|
Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs |
| |
|
|
Chin. Phys. B
2018 Vol.27 (9): 97309-097309
[Abstract]
(766)
[HTML 1 KB]
[PDF 892 KB]
(209)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
